Bismuth doped fibers BGDF-SM-7/125-1430 and HC

Article BGDF-SM-7/125-1430 and BGDF-SM-7/125-1430-HC

APPLICATION NOTES:

Bismuth-Germanium codoped fiber BGDF-SM-7/125-1430 and BGDF-SM-7/125-1430-HC series is specially designed for typical application for amplifiers, lasers, superfluorescent fiber sources operating at 1370-1490nm.

The fibers with article BGDF-SM-7/125-1430-HC has more attractive core absorption and typ.gain and shorter length is required to achieve the result.

Minimal fiber length required for 25 dB gain at 1430 nm L=85m (actual length depends on pump and signal power)

Minimal fiber length required for 25 dB gain in the range 1.41-1.45 L=100m (actual length depends on pump and signal power).

Please see frequently asked questions below.

BGDF-SM-7/125-1430

BGDF-SM-7/125-1430-HC

FIBER SPECIFICATIONS

Bismuth doped fiber	BGDF-SM-7/125-1430	BGDF-SM-7/125-1430-HC
Wavelength range, nm	1370 ÷ 1490
Core diameter, µm	6.5 ± 0.6
Clad diameter, µm	125 ± 5
Coating diameter, µm	230 ± 20
Coating material type	silicon rubber
Core NA	0.14 ± 0.02
Cutoff wavelength, µm	1.15 ± 0.1
Amplification range (-3dB), nm	1410 ÷ 1450
Core absorption (1310 nm), dB/m	0.3 ± 0.06	0.53 ± 0.1
Typ. peak gain (@1430 nm), dB/m	> 0.3 (Pp ~ 200mW at 1310nm)	> 0.5 (Pp ~ 200mW at 1310nm)
Typ. gain (@1410 ÷ 1450 nm), dB/m	> 0.2 (Pp ~ 200mW at 1310nm)	> 0.33 (Pp ~ 200mW at 1310nm)
Typ. gain for Polarization maintaining fiber version (@1410 ÷ 1450 nm), dB/m	> 0.3	-
Tipical laser eff-cy, %	> 50% (vs pump power at 1310 nm)
Splice loss with SMF28 (@1310), dB	~ 0.2

Bismuth doped fiber (Article BGDF-SM-7/125-1430 and BGDF-SM-7/125-1430-HC)

FORC PUBLICATIONS OF BISMUTH DOPED FIBERS

O+E Band BDFA with Flattop 116 nm Gain Bandwidth Pumped with 250 mW at 1256 nm

Conference:OFC 2021. Autor: Aleksandr Khegai1, Yan Ososkov, Sergei Firstov,Konstantin Riumkin, Sergey Alyshev, Alexander Kharakhordin, Alexey Lobanov, Alexey Guryanov, and Mikhail Melkumov

Heterodyne photothermal spectroscopy of methane near 1651 nm inside hollow-core fiber using a bismuth-doped fiber amplifier

Journal: Vol.60, No.15, 20May, 2021 Optical Society of America, Autor: Grzegorz Gomolka, Monika Krajewska, Aleksandr M. Khegai, Sergey V. Alyshev, Aleksey S. Lobanov, Sergei V. Firstov, Dariusz Pysz, Grzegorz Stepniewski, Ryszard Buczynski, Mariusz Klimczak, and Michal Nikodem

Operation of a Single-Frequency Bismuth-Doped Fiber Power Amplifier near 1.65 µm

Publication: Dec 9, 2020 in Photonics, Author: Grzegorz Gomółka, Monika Krajewska, Małgorzata Kaleta, Aleksandr M. Khegai, Sergey V. Alyshev, Aleksey S. Lobanov, Sergei V. Firstov and Michał Nikodem

O-band bismuth-doped fiber amplifier with 67 nm bandwidth

Conference:OFC 2020, Author:Aleksandr Khegai, Yan Ososkov, Sergei Firstov,Konstantin Riumkin, etc

Characterization of a single-frequency bismuth-doped fiber power amplifier with a continuous wave and modulated seed source at 1687nm

Publication: Vol. 59, No. 6 | 20 February 2020 | Applied Optics, Author: Grzegorz Gomolka, Aleksandr M. Khegai, Sergei V. Alyshev, Aleksey S. Lobanov, etc.

Lasing properties of thermally treated GeO2–SiO2 glass fibers doped with bismuth

Publication: Applied Physics B (2020) 126:87. Author: A. V. KharakhordIn, S. V. Alyshev, E. G. Firstova, A. S. Lobanov, etc.

25Gbs–1 data transmission using a bismuth-doped fibre amplifier with a gain peak shifted to 1300nm

Publication:Quantum Electronics 48(11) 989-992(2018). Author: M. A. Melkumov, V. Mikhailov, A. M. Khegai, K. E. Rjumkin, etc.

Wideband bismuth- and erbium-codoped optical fiber amplifier for C + L + U-telecommunication band

Publication: Laser Phys. Lett. 14(2017) 110001 (5pp). Author: S. V. Firstov, K. E. Riumkin, A. M. Khegai, S. V. Alyshev, M. A Melkumov, etc.

Bismuth/erbium-doped germanosilicate fibre amplifier with a bandwidth above 200nm

Publication:Quantum Electronics 46(11) 973-975 (2016). Author: E. M. Dianov, K. E. Riumkin, V. F. Khopin, S. V. Alyshev, etc.

Bi doped optical fibers and fiber lasers

Publication: IEEE JSTQE 2014. Autor: I.A. Bufetov, M.A. Melkumov, S.V. Firstov, K.E. Riumkin, A.V. Shubin, V.F. Khopin, A.N. Guryanov, and E.M. Dianov, Member, IEEE